IMPROVEMENT OF PHOTO-LUMINESCENCE OF MOLECULAR-BEAM EPITAXIALLY GROWN GAXALYIN1-X-YAS BY USING AN AS2 MOLECULAR-BEAM

被引：11

作者：

TSANG, WT

DITZENBERGER, JA

OLSSON, NA

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 08期

关键词：

D O I：

10.1109/EDL.1983.25731

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：275 / 277

页数：3

共 25 条

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[9] AL-GA DISORDER IN ALXGA1-XAS ALLOYS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[10] CORRELATION BETWEEN ELECTRON TRAPS AND GROWTH-PROCESSES IN N-GAAS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

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