SUB-MICRON ELECTRON-TRANSPORT IN SILICON AT 300 AND 77 K

被引：3

作者：

NAG, BR ^{[1
]}

AHMED, SR ^{[1
]}

ROY, MD ^{[1
]}

机构：

[1] JADAVPUR UNIV,DEPT PHYS,CALCUTTA 700032,W BENGAL,INDIA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 86卷 / 02期

关键词：

D O I：

10.1002/pssa.2210860237

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：773 / 779

页数：7

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