TANDEM ACTIVE LAYER SUPERLUMINESCENT DIODE WITH A VERY WIDE SPECTRUM

被引：6

作者：

NOGUCHI, Y

YASAKA, H

MIKAMI, O

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-shi 243-01

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 18期

关键词：

D O I：

10.1063/1.105037

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Broader spectral width superluminescent diodes having a new structure of tandem active layers are proposed and fabricated at a 1.3-mu-m wavelength. The emission spectral widths were successfully broadened over 100 nm, thus achieving a very short coherence length of less than 10-mu-m. Applying this new active layer structure to a Fabry-Perot cavity, a unique function of superluminescent/laser mode switching is also demonstrated.

引用

页码：1976 / 1978

页数：3

共 8 条

[1] GAINASP INP INTEGRATED LASER WITH BUTT-JOINTED BUILT-IN DISTRIBUTED-BRAGG-REFLECTION WAVEGUIDE [J].