SEMI-QUANTITATIVE INSITU AUGER ANALYSIS OF SILICON-NITRIDE LAYERS DEPOSITED BY REACTIVE ION-BEAM SPUTTERING

被引：13

作者：

BOSSEBOEUF, A

BOUCHIER, D

机构：

来源：

SURFACE SCIENCE | 1985年 / 162卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(85)90968-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：695 / 701

页数：7

共 9 条

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[5] AN IMPORTANT STEP IN QUANTITATIVE AUGER ANALYSIS - THE USE OF PEAK TO BACKGROUND RATIO [J].

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[7] HYDROGEN-INDUCED FEATURES IN THE AUGER-SPECTRA FROM AMORPHOUS-SILICON [J].

MADDEN, HH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :1201-1204

[8] THERMAL NITRIDATION OF SILICON - AN XPS AND LEED INVESTIGATION [J].

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[9]

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