SEMI-QUANTITATIVE INSITU AUGER ANALYSIS OF SILICON-NITRIDE LAYERS DEPOSITED BY REACTIVE ION-BEAM SPUTTERING

被引:13
作者
BOSSEBOEUF, A
BOUCHIER, D
机构
关键词
D O I
10.1016/0039-6028(85)90968-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:695 / 701
页数:7
相关论文
共 9 条
[1]  
BOSSEBOEUF A, UNPUB
[2]   THE SECONDARY-ELECTRON EMISSION COEFFICIENT OF DISORDERED SURFACES [J].
BOUCHARD, C ;
CARETTE, JD .
SURFACE SCIENCE, 1980, 100 (01) :241-250
[3]  
BOUCHIER D, 1983, J ELECTROCHEM SOC, V130, P642
[4]   THE USE OF PEAK TO BACKGROUND RATIO IN QUANTITATIVE AUGER ANALYSIS [J].
LANGERON, JP ;
MINEL, L ;
VIGNES, JL ;
BOUQUET, S ;
PELLERIN, F ;
LORANG, G ;
AILLOUD, P ;
LEHERICY, J .
SOLID STATE COMMUNICATIONS, 1984, 49 (05) :405-407
[5]   AN IMPORTANT STEP IN QUANTITATIVE AUGER ANALYSIS - THE USE OF PEAK TO BACKGROUND RATIO [J].
LANGERON, JP ;
MINEL, L ;
VIGNES, JL ;
BOUQUET, S ;
PELLERIN, F ;
LORANG, G ;
AILLOUD, P ;
LEHERICY, J .
SURFACE SCIENCE, 1984, 138 (2-3) :610-628
[6]   SURFACE CHEMICAL CHARACTERIZATION BY AUGER SIGNAL DECOMPOSITION - SILICON-NITRIDE [J].
MADDEN, HH ;
NELSON, GC .
APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL) :408-419
[7]   HYDROGEN-INDUCED FEATURES IN THE AUGER-SPECTRA FROM AMORPHOUS-SILICON [J].
MADDEN, HH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :1201-1204
[8]   THERMAL NITRIDATION OF SILICON - AN XPS AND LEED INVESTIGATION [J].
MAILLOT, C ;
ROULET, H ;
DUFOUR, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :316-319
[9]  
VIGNES JL, 1984, AUG P ICTF 6 STOCKH