INP MISFET TECHNOLOGY - INTERFACE CONSIDERATIONS

被引：28

作者：

WAGER, JF ^{[1
]}

OWEN, SJT ^{[1
]}

PRASAD, SJ ^{[1
]}

机构：

[1] TEKTRONIX INC,BEAVERTON,OR 97077

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 01期

关键词：

D O I：

10.1149/1.2100399

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：160 / 165

页数：6

共 49 条

[1] THE CORRELATION OF CHANNEL MOBILITY WITH INTERFACE STATE MEASUREMENTS ON INP MOSFET STRUCTURES [J].

CAMERON, DC ;

FOREMAN, BJ .

SOLID-STATE ELECTRONICS, 1984, 27 (04) :305-309

[2] STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED COMPOUND SEMICONDUCTORS [J].

CHRISTEL, LA ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5050-5055

[3]

FRITZSCHE D, 1980, I PHYS C SER, V50, P258

[4] INFLUENCE OF INTERFACIAL STRUCTURE ON THE ELECTRONIC-PROPERTIES OF SIO2/INP MISFETS [J].

GEIB, KM ;

GOODNICK, SM ;

LIN, DY ;

GANN, RG ;

WILMSEN, CW ;

WAGER, JF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :516-521

[5] NEW MODEL FOR SLOW CURRENT DRIFT IN INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

GOODNICK, SM ;

HWANG, T ;

WILMSEN, CW .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :453-455

[6] ELECTRICAL MODELING OF COMPOUND SEMICONDUCTOR INTERFACE FOR FET DEVICE ASSESSMENT [J].

HASEGAWA, H ;

SAWADA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1055-1061

[7] ON THE ELECTRICAL-PROPERTIES OF COMPOUND SEMICONDUCTOR INTERFACES IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES AND THE POSSIBLE ORIGIN OF INTERFACE STATES [J].

HASEGAWA, H ;

SAWADA, T .

THIN SOLID FILMS, 1983, 103 (1-2) :119-140

[8]

HASEGAWA H, 1984, WORKSHOP DIELECTRIC

[9]

HAYES CV, 1983, THIN SOLID FILMS, V103, P77

[10] EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE [J].

HEIMAN, FP ;

WARFIELD, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) :167-&

← 1 2 3 4 5 →