THE CORRELATION OF CHANNEL MOBILITY WITH INTERFACE STATE MEASUREMENTS ON INP MOSFET STRUCTURES

被引：2

作者：

CAMERON, DC ^{[1
]}

FOREMAN, BJ ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 04期

关键词：

D O I：

10.1016/0038-1101(84)90162-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：305 / 309

页数：5

共 19 条

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