HALL MEASUREMENTS ON MOSFET DEVICES PREPARED BY TCE OXIDATION

被引：4

作者：

KOHL, D ^{[1
]}

BECKER, C ^{[1
]}

HEILAND, G ^{[1
]}

NIGGEBRUGGE, U ^{[1
]}

BALK, P ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECH,D-5100 AACHEN,FED REP GER

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 04期

关键词：

D O I：

10.1088/0022-3719/14/4/026

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：553 / 558

页数：6

共 12 条

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[8] STRUCTURE AND COMPOSITION OF SILICON-OXIDES GROWN IN HCI-O2 AMBIENTS [J].

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