INP MISFET TECHNOLOGY - INTERFACE CONSIDERATIONS

被引：28

作者：

WAGER, JF ^{[1
]}

OWEN, SJT ^{[1
]}

PRASAD, SJ ^{[1
]}

机构：

[1] TEKTRONIX INC,BEAVERTON,OR 97077

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 01期

关键词：

D O I：

10.1149/1.2100399

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：160 / 165

页数：6

共 49 条

[31] CHANNEL MOBILITY ENHANCEMENT IN INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

PANDE, KP ;

GUTIERREZ, D .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :416-418

[32] INP MIS TRANSISTORS WITH GROWN-IN SULFUR DIELECTRIC [J].

POST, G ;

DIMITRIOU, P ;

SCAVENNEC, A ;

DUHAMEL, N ;

MIRCEA, A .

ELECTRONICS LETTERS, 1983, 19 (13) :459-461

[33]

PRASAD SJ, 1985, THESIS OREGON STATE

[34]

PRASAD SJ, 1985, OCT EL SOC M LAS VEG

[35] PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY OF SEMI-INSULATING INP-FE AND INP-CR [J].

RHEE, JK ;

BHATTACHARYA, PK .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4247-4249

[36] ELECTRICAL AND OPTICAL CHARACTERISTICS OF INP ENHANCEMENT MODE METAL-INSULATOR SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH A NOVEL ANODIC DOUBLE-LAYER GATE INSULATOR [J].

SAWADA, T ;

HASEGAWA, H ;

OHNO, H .

THIN SOLID FILMS, 1983, 103 (1-2) :107-117

[37] INFLUENCE OF INTERFACE STATES ON DYNAMIC TRANSCONDUCTANCE OF MIS-FETS [J].

SCHRADER, L .

SOLID-STATE ELECTRONICS, 1977, 20 (08) :671-674

[38]

SHEINKMAN MK, 1976, SOV PHYS SEMICOND+, V10, P128

[39] NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION [J].

SPICER, WE ;

CHYE, PW ;

SKEATH, PR ;

SU, CY ;

LINDAU, I .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1422-1433

[40] HIGH MOBILITY INSULATED GATE TRANSISTORS ON INP [J].

TAYLOR, MJ ;

LILE, DL ;

NEDOLUHA, AK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :522-526

← 1 2 3 4 5 →