LOW-ENERGY ION-BOMBARDMENT INDUCED ANISOTROPY IN SPUTTERED MOS2-X THIN-FILMS

被引:6
作者
SUN, ZW [1 ]
GRIBI, P [1 ]
LEVY, F [1 ]
机构
[1] ECOLE POLYTECH FED,INST PHYS APPL,CH-1015 LAUSANNE,SWITZERLAND
关键词
D O I
10.1088/0022-3727/22/8/029
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:1210 / 1216
页数:7
相关论文
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