LOW-ENERGY ION-BOMBARDMENT INDUCED ANISOTROPY IN SPUTTERED MOS2-X THIN-FILMS

被引：6

作者：

SUN, ZW ^{[1
]}

GRIBI, P ^{[1
]}

LEVY, F ^{[1
]}

机构：

[1] ECOLE POLYTECH FED,INST PHYS APPL,CH-1015 LAUSANNE,SWITZERLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1989年 / 22卷 / 08期

关键词：

D O I：

10.1088/0022-3727/22/8/029

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1210 / 1216

页数：7

共 23 条

[11] ENHANCED ENDURANCE LIFE OF SPUTTERED MOSX FILMS ON STEEL BY ION-BEAM MIXING [J].

KOBS, K ;

DIMIGEN, H ;

HUBSCH, H ;

TOLLE, HJ ;

LEUTENECKER, R ;

RYSSEL, H .

MATERIALS SCIENCE AND ENGINEERING, 1987, 90 :281-286

[12]

MATHIEU HJ, 1984, TOP CURR PHYS, V37, P39

[13] FRICTION AND WEAR MEASUREMENTS OF SPUTTERED MOSX FILMS AMORPHIZED BY ION-BOMBARDMENT [J].

MIKKELSEN, NJ ;

CHEVALLIER, J ;

SORENSEN, G ;

STRAEDE, CA .

APPLIED PHYSICS LETTERS, 1988, 52 (14) :1130-1132

[14] ION-BEAM BOMBARDMENT EFFECTS DURING FILM DEPOSITION [J].

ROSSNAGEL, SM ;

CUOMO, JJ .

VACUUM, 1988, 38 (02) :73-81

[15] ELECTRON-LATTICE INTERACTION IN LAYERED SEMICONDUCTORS [J].

SCHMID, P .

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1974, B 21 (02) :258-270

[16]

SIGMUND P, 1969, PHYS REV, V187, P768, DOI 10.1103/PhysRev.187.768

[17] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS [J].

SIGMUND, P .

PHYSICAL REVIEW, 1969, 184 (02) :383-+

[18] MORPHOLOGICAL AND FRICTIONAL BEHAVIOR OF SPUTTERED MOS2 FILMS [J].

SPALVINS, T .

THIN SOLID FILMS, 1982, 96 (01) :17-24

[19]

Thornton J. A., 1982, DEPOSITION TECHNOLOG, P170

[20] HIGH-RATE THICK-FILM GROWTH [J].

THORNTON, JA .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :239-260

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