THE EFFECT OF THE METALLURGICAL PROPERTIES OF THE IN-GAAS INTERFACE ON THE ELECTRICAL-PROPERTIES OF OHMIC CONTACTS TO GAAS

被引：4

作者：

KULKARNI, AK

BLANKINSHIP, TJ

机构：

来源：

THIN SOLID FILMS | 1982年 / 96卷 / 04期

关键词：

D O I：

10.1016/0040-6090(82)90512-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：285 / 290

页数：6

共 14 条

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[7]

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[8] REVIEW OF THEORY AND TECHNOLOGY FOR OHMIC CONTACTS TO GROUP III-V COMPOUND SEMICONDUCTORS [J].

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[10]

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