EXCHANGE-REACTION, CLUSTERING, AND SURFACE SEGREGATION AT THE AL/INSB(110) INTERFACE

被引：18

作者：

BOSCHERINI, F

SHAPIRA, Y

CAPASSO, C

ALDAO, C

DELGIUDICE, M

WEAVER, JH

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.35.9580

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9580 / 9585

页数：6

共 31 条

[1] SEGREGATION OF AS ON GAAS(110) SURFACES OBSERVED IMMEDIATELY AFTER CLEAVAGE
BARTELS, F
CLEMENS, HJ
MONCH, W
[J]. PHYSICA B & C, 1983, 117 (MAR): : 801 - 803
[2] GAAS(110)-AL INTERFACES FORMED AT LOW-TEMPERATURE
BONAPACE, CR
LI, K
KAHN, A
[J]. JOURNAL DE PHYSIQUE, 1984, 45 (NC-5): : 409 - 418
[3] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES
BRILLSON, LJ
BACHRACH, RZ
BAUER, RS
MCMENAMIN, J
[J]. PHYSICAL REVIEW LETTERS, 1979, 42 (06) : 397 - 401
[4] QUANTITATIVE MODEL OF REACTIVE METAL-SEMICONDUCTOR INTERFACE GROWTH USING HIGH-RESOLUTION PHOTOEMISSION RESULTS
BUTERA, RA
DELGIUDICE, M
WEAVER, JH
[J]. PHYSICAL REVIEW B, 1986, 33 (08): : 5435 - 5449
[5] SURFACE-ATOM X-RAY PHOTOEMISSION FROM CLEAN METALS - CU, AG, AND AU
CITRIN, PH
WERTHEIM, GK
BAER, Y
[J]. PHYSICAL REVIEW B, 1983, 27 (06): : 3160 - 3175
[6] INITIAL ADSORPTION STATE FOR AL ON GAAS(110) AND ITS ROLE IN THE SCHOTTKY-BARRIER FORMATION
DANIELS, RR
KATNANI, AD
ZHAO, TX
MARGARITONDO, G
ZUNGER, A
[J]. PHYSICAL REVIEW LETTERS, 1982, 49 (12) : 895 - 898
[7] MANY-ELECTRON SINGULARITY IN X-RAY PHOTOEMISSION AND X-RAY LINE SPECTRA FROM METALS
DONIACH, S
SUNJIC, M
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (02): : 285 - &
[8] ATOMIC GEOMETRY OF GAAS(110)-P(1X1)-AL
DUKE, CB
PATON, A
MEYER, RJ
BRILLSON, LJ
KAHN, A
KANANI, D
CARELLI, J
YEH, JL
MARGARITONDO, G
KATNANI, AD
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (06) : 440 - 443
[9] EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
[10] METAL-ANION BOND STRENGTH AND ROOM-TEMPERATURE DIFFUSION AT METAL/GAAS INTERFACES - TRANSITION VERSUS RARE-EARTH VERSUS AU METAL OVERLAYERS
GRIONI, M
JOYCE, JJ
WEAVER, JH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1986, 4 (03): : 965 - 968

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