THERMAL OXIDATION OF SILICON - GROWTH MECHANISM AND INTERFACE PROPERTIES

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[2] BUSEN KM, 1965, T METALL SOC AIME, V233, P536

[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[4] AN INVESTIGATION OF INSTABILITY AND CHARGE MOTION IN METAL-SILICON OXIDE-SILICON STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) : 222 - +

[5] HOFSTEIN SR, PERSONAL COMMUNICATI

[6] STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5 [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 376 - &

[7] EFFECT OF TEMPERATURE + BIAS ON GLASS-SILICON INTERFACES [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 385 - &

[8] LANDER JJ, 1963, ANN NY ACAD SCI, V101, P583

[9] THE HIGH TEMPERATURE OXIDATION OF SILICON [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1957, 61 (09) : 1200 - 1205

[10] LEE RW, 1964, PHYS CHEM GLASSES-B, V5, P35

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[2] BUSEN KM, 1965, T METALL SOC AIME, V233, P536

[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[4] AN INVESTIGATION OF INSTABILITY AND CHARGE MOTION IN METAL-SILICON OXIDE-SILICON STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) : 222 - +

[5] HOFSTEIN SR, PERSONAL COMMUNICATI

[6] STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5 [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 376 - &

[7] EFFECT OF TEMPERATURE + BIAS ON GLASS-SILICON INTERFACES [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 385 - &

[8] LANDER JJ, 1963, ANN NY ACAD SCI, V101, P583

[9] THE HIGH TEMPERATURE OXIDATION OF SILICON [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1957, 61 (09) : 1200 - 1205

[10] LEE RW, 1964, PHYS CHEM GLASSES-B, V5, P35