SPACE-CHARGE-LIMITED CONDUCTION FOR THE DETERMINATION OF THE MIDGAP DENSITY OF STATES IN AMORPHOUS-SILICON - THEORY AND EXPERIMENT

被引：107

作者：

SOLOMON, I ^{[1
]}

BENFERHAT, R ^{[1
]}

TRANQUOC, H ^{[1
]}

机构：

[1] SOLEMS SA,ZONE IND LES GLAISES,F-91120 PALAISEAU,FRANCE

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.30.3422

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3422 / 3429

页数：8

共 19 条

[1] CAPACITANCE STUDIES ON AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES
BEICHLER, J
FUHS, W
MELL, H
WELSCH, HM
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 587 - 592
[2] BENFERHAT R, THESIS U PARIS
[3] SPACE-CHARGE LIMITED CONDUCTION IN N+NN+ AMORPHOUS HYDROGENATED SILICON FILMS
BHATTACHARYA, E
GUHA, S
KRISHNA, KV
BAPAT, DR
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6285 - 6288
[4] DIRECT MEASUREMENT OF THE BULK-DENSITY OF GAP STATES IN N-TYPE HYDROGENATED AMORPHOUS-SILICON
COHEN, JD
LANG, DV
HARBISON, JP
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (03) : 197 - 200
[5] CALCULATION OF THE DYNAMIC-RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATES
COHEN, JD
LANG, DV
[J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5321 - 5350
[6] DETERMINATION OF MIDGAP DENSITY OF STATES IN A-SI-H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS
DENBOER, W
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 451 - 454
[7] DETERMINATION OF THE DENSITY OF GAP STATES - FIELD-EFFECT AND SURFACE-ADSORPTION
FRITZSCHE, H
[J]. SOLAR CELLS, 1980, 2 (03): : 289 - 300
[8] DETERMINATION OF THE DENSITY OF STATES OF A-SI-H USING THE FIELD-EFFECT
GOODMAN, NB
FRITZSCHE, H
OZAKI, H
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 599 - 604
[9] ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS
GOODMAN, NB
FRITZSCHE, H
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (01): : 149 - 165
[10] FIELD-EFFECT MEASUREMENT ON THE FILM-SUBSTRATE AND FILM-VACUUM INTERFACES OF A-SI-H
GUHA, S
NARASIMHAN, KL
NAVKHANDEWALA, RV
PIETRUSZKO, SM
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (06) : 572 - 573

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