STRUCTURAL CHARACTERIZATION OF PLASMA-DOPED SILICON BY HIGH-RESOLUTION X-RAY-DIFFRACTION

High resolution x-ray diffraction methods have been used to characterize boron-doped silicon fabricated using low energy plasma source ion implantation (PSII). Double-crystal rocking curves recorded using the asymmetric (113) reflection show increasing intensity in the low-angle tail as the ion dose was increased from 1.1 x 10(15) to 4.4 x 10(15) cm-2. Scans of the diffuse intensity around the 113 point in reciprocal space using triple crystal diffraction showed no significant differences in the magnitude of diffuse kinematic scattering from an unimplanted control sample and the plasma doped silicon; in all cases, negligible diffuse scattering was observed. This suggests that the doping by PSII is accompanied by negligible amount of crystallographic damage. Postimplant rapid thermal annealing was found to cause no change in the level of diffuse scattering; however, the asymmetry in the double-crystal rocking curves switched to the high-angle side. Dynamic simulation of the rocking curves has been used to estimate the strain distribution in the as-implanted and annealed samples.