LIGHT-INDUCED-CHANGES OF PHOSPHORUS BONDING CONFIGURATIONS IN HYDROGENATED AMORPHOUS-SILICON

被引:6
作者
MCCARTHY, MJ
REIMER, JA
机构
来源
PHYSICAL REVIEW B | 1987年 / 36卷 / 08期
关键词
D O I
10.1103/PhysRevB.36.4525
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:4525 / 4527
页数:3
相关论文
共 10 条
[1]  
ABRAGAM A, 1961, PRINCIPLES NUCLEAR M
[2]   NMR-STUDIES OF AMORPHOUS PHOSPHORUS [J].
JELLISON, GE .
SOLID STATE COMMUNICATIONS, 1979, 30 (08) :481-485
[3]   COORDINATION OF ARSENIC IMPURITIES IN AMORPHOUS SILICON-HYDROGEN ALLOYS [J].
KNIGHTS, JC ;
HAYES, TM ;
MIKKELSEN, JC .
PHYSICAL REVIEW LETTERS, 1977, 39 (11) :712-715
[4]   LOCAL BONDING CONFIGURATION OF PHOSPHORUS IN DOPED AND COMPENSATED AMORPHOUS HYDROGENATED SILICON [J].
REIMER, JA ;
DUNCAN, TM .
PHYSICAL REVIEW B, 1983, 27 (08) :4895-4901
[5]   SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J].
SPEAR, WE ;
LECOMBER, PG .
SOLID STATE COMMUNICATIONS, 1975, 17 (09) :1193-1196
[6]   THERMAL EQUILIBRATION IN DOPED AMORPHOUS-SILICON [J].
STREET, RA ;
KAKALIOS, J ;
HAYES, TM .
PHYSICAL REVIEW B, 1986, 34 (04) :3030-3033
[7]   DEFECT STATES IN DOPED AND COMPENSATED A-SI-H [J].
STREET, RA ;
BIEGELSEN, DK ;
KNIGHTS, JC .
PHYSICAL REVIEW B, 1981, 24 (02) :969-984
[8]   DOPANT AND DEFECT STATES IN A-SI-H [J].
STREET, RA ;
BIEGELSEN, DK ;
JACKSON, WB ;
JOHNSON, NM ;
STUTZMANN, M .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (03) :235-245
[9]   LOCALIZED STATES IN DOPED AMORPHOUS-SILICON [J].
STREET, RA .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :1-16
[10]   THE DOPING EFFICIENCY IN AMORPHOUS-SILICON AND GERMANIUM [J].
STUTZMANN, M .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 53 (01) :L15-L21