INTERFACE ANALYSIS OF AL2O3/INP STRUCTURE PREPARED BY MOLECULAR-BEAM DEPOSITION

被引：3

作者：

OHYAMA, H

NARUSAWA, T

NAKASHIMA, H

TAKAGI, S

SUGANO, T

机构：

[1] OPTOELECTR JOINT RES LAB,KAWASAKI 211,JAPAN

[2] UNIV TOKYO,DEPT ELECT ENGN,ANAT 2,TOKYO 113,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 10期

关键词：

D O I：

10.1143/JJAP.26.1615

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1615 / 1621

页数：7

共 16 条

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