A COMBINED HIGH-RESOLUTION ELECTRON-MICROSCOPY, X-RAY PHOTOEMISSION SPECTROSCOPY, AND ELECTRICAL-PROPERTIES STUDY OF THE INP-SIO2 INTERFACE

被引：14

作者：

KRIVANEK, OL

LILIENTAL, Z

WAGER, JF

GAN, RG

GOODNICK, SM

WILMSEN, CW

机构：

[1] ARIZONA STATE UNIV,DEPT PHYS,TEMPE,AZ 85287

[2] OREGON STATE UNIV,DEPT ELECT & COMP ENGN,CORVALLIS,OR 97331

[3] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期

关键词：

D O I：

10.1116/1.583056

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1081 / 1086

页数：6

共 22 条

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