STRUCTURAL STUDY OF GAAS-DIELECTRIC FILM (CAF2,AL2O3) INTERFACES BY HIGH-ENERGY ION-SCATTERING

被引：1

作者：

NARUSAWA, T

OHYAMA, H

NAKASHIMA, H

机构：

[1] Optoelectronics Joint Research Lab, Kawasaki, Jpn, Optoelectronics Joint Research Lab, Kawasaki, Jpn

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 02期

关键词：

D O I：

10.1149/1.2100474

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：437 / 439

页数：3

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