LUMINESCENCE AND EXCITATION-SPECTRA OF EXCITON EMISSION IN GAAS

被引：182

作者：

HEIM, U ^{[1
]}

HIESINGE.P ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPER FORSCH,STUTTGART,WEST GERMANY

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1974年 / 66卷 / 02期

关键词：

D O I：

10.1002/pssb.2220660208

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：461 / 470

页数：10

共 26 条

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[23] PHOTOLUMINESCENCE SPECTRUM OF BOUND EXCITONS IN INDIUM PHOSPHIDE AND GALLIUM ARSENIDE [J].

WHITE, AM ;

TAYLOR, LL ;

ASHEN, DJ ;

CLARKE, RC ;

MULLIN, JB ;

DEAN, PJ .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (13) :1727-&

[24] ORIGIN OF BOUND EXCITON LINES IN INDIUM-PHOSPHIDE AND GALLIUM-ARSENIDE [J].

WHITE, AM ;

DEAN, PJ ;

DAY, B .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (07) :1400-1411

[25]

Williams E. W., 1972, SEMICONDUCT SEMIM<D>, V8, P321

[26] SILICON AS A RESIDUAL DONOR IN HIGH-PURITY GAAS [J].

WOLFE, CM ;

KORN, DM ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1974, 24 (02) :78-80

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