AN IMPROVED TRILEVEL RESIST SYSTEM FOR SUB-MICRON OPTICAL LITHOGRAPHY

被引：10

作者：

GELLRICH, N ^{[1
]}

BENEKING, H ^{[1
]}

ARDEN, W ^{[1
]}

机构：

[1] SIEMENS RES LABS,MUNICH,FED REP GER

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 01期

关键词：

D O I：

10.1116/1.583258

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：335 / 338

页数：4

共 8 条

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[3] LINEWIDTH CONTROL IN PROJECTION LITHOGRAPHY USING A MULTILAYER RESIST PROCESS
OTOOLE, MM
LIU, ED
CHANG, MS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) : 1405 - 1410
[4] SPIN-ON GLASS AS AN INTERMEDIATE LAYER IN A TRI-LAYER RESIST PROCESS
RAY, GW
PENG, S
BURRIESCI, D
OTOOLE, MM
LIU, ED
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2152 - 2154
[5] STEPHANI D, 1984, TECH P SEMICON EUROP, V84, P41
[6] TING CH, INTERFACE 82 KODAK M
[7] UOYA S, 1983, P MICROCIRCUIT ENG 8, P199
[8] WATTS RK, 1980, 1980 IEDM TECH DIG, P772