SPIN-ON GLASS AS AN INTERMEDIATE LAYER IN A TRI-LAYER RESIST PROCESS

被引：27

作者：

RAY, GW

PENG, S

BURRIESCI, D

OTOOLE, MM

LIU, ED

机构：

来源：

关键词：

D O I：

10.1149/1.2124398

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2152 / 2154

页数：3

共 5 条

[1] MOLECULAR-PARAMETERS AND LITHOGRAPHIC PERFORMANCE OF POLY(CHLOROMETHYLSTYRENE) - A HIGH-PERFORMANCE NEGATIVE ELECTRON RESIST
CHOONG, HS
KAHN, FJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1121 - 1126
[2] EGITTO FD, 1981, SOLID STATE TECHNOL, V24, P71
[3] SILICON TRANSFER LAYER FOR MULTILAYER RESIST SYSTEMS
KRUGER, JB
RISSMAN, P
CHANG, MS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1320 - 1324
[4] HIGH-RESOLUTION, STEEP PROFILE RESIST PATTERNS
MORAN, JM
MAYDAN, D
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1620 - 1624
[5] OTOOLE MM, 1981, SPIE SEMICONDUCTOR M, V275, P128