GENERATION OF SCRATCH-INDUCED DISLOCATIONS IN SILICON AND ITS ORIENTATION DEPENDENCE

被引：5

作者：

IIZUKA, T

OKADA, Y

KIKUCHI, M

机构：

来源：

关键词：

D O I：

10.1143/JJAP.4.237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：237 / &

共 7 条

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STICKLER, R .

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[3]

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[4]

GATOS HC, 1960, PROPERTIES ELEMEN ED, P195

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QUEISSER, HJ ;

VANLOON, PGG .

[6] SURFACE DAMAGE ON ABRADED SILICON SPECIMENS [J].

STICKLER, R ;

BOOKER, GR .

PHILOSOPHICAL MAGAZINE, 1963, 8 (89) :859-&

[7] SURFACE DAMAGE AND COPPER PRECIPITATION IN SILICON [J].

THOMAS, DJD .

PHYSICA STATUS SOLIDI, 1963, 3 (12) :2261-2273