EVAPORATED A-SI FILMS WITH LOW ELECTRON-SPIN-RESONANCE DEFECT DENSITY BY HYDROGENATION UNDER NH3 AMBIENT

被引：8

作者：

KUBLER, L

KOULMANN, JJ

HAUG, R

JAEGLE, A

机构：

来源：

SOLID STATE COMMUNICATIONS | 1983年 / 48卷 / 01期

关键词：

D O I：

10.1016/0038-1098(83)90184-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：61 / 64

页数：4

共 23 条

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[6] AN ALTERNATIVE METHOD OF PREPARING HYDROGEN-DOPED EVAPORATED AMORPHOUS-SILICON - PRELIMINARY-REPORT
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[7] INFRARED VIBRATIONAL-SPECTRA OF RF-SPUTTERED HYDROGENATED AMORPHOUS SILICON
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[8] A NEW EVAPORATION METHOD FOR PREPARING HYDROGENATED AMORPHOUS-SILICON FILMS
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[J]. SOLID STATE COMMUNICATIONS, 1982, 41 (09) : 675 - 677
[9] CONNECTION BETWEEN ESR AND ELECTRICAL-CONDUCTION IN AMORPHOUS SI FILMS
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[J]. SOLID STATE COMMUNICATIONS, 1977, 23 (01) : 41 - 44
[10] ANNEALING EFFECTS ON RELATIONSHIPS BETWEEN ELECTRON-SPIN-RESONANCE, ELECTRICAL AND OPTICAL-PROPERTIES IN A-SI - H
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[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (03): : 347 - 360

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