CRYSTALLINE FILM QUALITY IN REDUCED PRESSURE SILICON EPITAXY AT LOW-TEMPERATURE

被引：9

作者：

NAGAO, S

HIGASHITANI, K

AKASAKA, Y

NAKATA, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 10期

关键词：

D O I：

10.1063/1.335365

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4589 / 4593

页数：5

共 9 条

[1] NUCLEATION AND GROWTH OF SILICON BY CVD [J].

BLOEM, J .

JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) :581-604

[2]

EVERSTEYN FC, 1974, PHILIPS RES REP, V29, P45

[3]

HERRING RB, 1979, 7TH P INT C CVD M EL, P126

[4]

KULKARNI SB, 1980, ELECTROCHEMICAL SOC, P1351

[5] LOW-PRESSURE SILICON EPITAXY [J].

OGIRIMA, M ;

SAIDA, H ;

SUZUKI, M ;

MAKI, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) :903-908

[6]

OTA Y, 1977, J ELECTROCHEM SOC, V24, P1975

[7] AUTODOPING OF EPITAXIAL SILICON [J].

SHEPHERD, WH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (06) :652-&

[8] SUCCESSIVE GROWTH OF SI AND SIO2 IN EPITAXIAL APPARATUS [J].

STEINMAIER, W ;

BLOEM, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (02) :206-209

[9] ALPHA-PARTICLE TRACKS IN SILICON AND THEIR EFFECT ON DYNAMIC MOS RAM RELIABILITY [J].

YANEY, DS ;

NELSON, JT ;

VANSKIKE, LL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (01) :10-16

← 1 →