BREAKDOWN ANALYSIS OF AN ASYMMETRICAL DOUBLE RECESSED POWER MESFETS

被引：18

作者：

GAQUIERE, C ^{[1
]}

BONTE, B ^{[1
]}

THERON, D ^{[1
]}

CROSNIER, Y ^{[1
]}

ARSENEHENRI, P ^{[1
]}

PACOU, T ^{[1
]}

机构：

[1] THOMSON CSF,SEMICOND SPECIF,F-91401 ORSAY,FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 02期

关键词：

D O I：

10.1109/16.370078

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

FET's with double stepped gate recess are commonly admitted to be presently a very convenient structure capable to overcome the fundamental power limitation related to the breakdown voltage. The present paper deals with an analysis of a double recessed MESFET with a very good and instructive breakdown performance. For the first time we explain an the basis of gate current observations why the double recess structure allows a large breakdown improvement not only at pinch off voltage but also at open channel. Moreover it is shown that the breakdown optimization is fully compatible with the microwave gain performance.

引用

页码：209 / 214

页数：6

共 13 条

[1] THE ROLE OF THE DEVICE SURFACE IN THE HIGH-VOLTAGE BEHAVIOR OF THE GAAS-MESFET [J].