DEPENDENCE OF IONIZATION CURRENT ON GATE BIAS IN GAAS-MESFETS

被引：43

作者：

CANALI, C

NEVIANI, A

TEDESCO, C

ZANONI, E

CETRONIO, A

LANZIERI, C

机构：

[1] ALENIA SPA,DIREZ RIC,RES LABS,I-00131 ROME,ITALY

[2] UNIV PADUA,DIPARTIMENTO ELECTRON & INFORMAT,I-35131 PADUA,ITALY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 03期

关键词：

Electric field effects - Ion implantation - Semiconducting gallium compounds;

D O I：

10.1109/16.199353

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the nonmonotonic behavior of gate current I(g) as a function of gate-to-source voltage V(gs) for depletion-mode double-implant GaAs MESFET's. We have performed experiments and numerical simulations to show that a) the main contribution to I(g) (in the range of drain biases studied) comes from impact-ionization-generated holes collected at the gate electrode, and b) that the bell shape of the I(g)(V(gs)) curve is strongly related to the drop of the electric field in the channel of the device as V(gs) is moved towards positive values.

引用

页码：498 / 501

页数：4

共 8 条

[1]

BACCARANI G, 1985, 4TH P INT C NUM AN S

[2]

CANALI C, 1991, IEEE ELECTRON DEVICE, V11, P80

[3] A SIMPLE METHOD TO CHARACTERIZE SUBSTRATE CURRENT IN MOSFETS [J].