A GENERAL CONTROL-VOLUME FORMULATION FOR MODELING IMPACT IONIZATION IN SEMICONDUCTOR TRANSPORT

被引：18

作者：

LAUX, SE ^{[1
]}

GROSSMAN, BM ^{[1
]}

机构：

[1] COLUMBIA UNIV,DEPT ELECT ENGN,NEW YORK,NY 10027

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1985年 / 4卷 / 04期

关键词：

D O I：

10.1109/TCAD.1985.1270151

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：520 / 526

页数：7

共 16 条

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[3]

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[7]

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[8] SEMICONDUCTOR-DEVICE SIMULATION USING GENERALIZED MOBILITY MODELS [J].

LAUX, SE ;

BYRNES, RG .

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[9]

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[10]

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