III-V COMPOUND SEMICONDUCTOR-DEVICES - OPTICAL-DETECTORS

被引：66

作者：

STILLMAN, GE

ROBBINS, VM

TABATABAIE, N

机构：

[1] UNIV ILLINOIS, MAT RES LAB, URBANA, IL 61801 USA

[2] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 11期

关键词：

D O I：

10.1109/T-ED.1984.21765

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1643 / 1655

页数：13

共 68 条

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[7] IMPACT IONIZATION IN (100)-ORIENTED, (110)-ORIENTED, AND (111)-ORIENTED INP AVALANCHE PHOTO-DIODES
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[8] NOISE AND MULTIPLICATION MEASUREMENTS IN INSB AVALANCHE PHOTODIODES
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[9] EXPERIMENTAL-DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN (100) GAAS
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STILLMAN, GE
[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) : 181 - 185
[10] ELECTRO-ABSORPTION PRODUCED MIXED INJECTION AND ITS EFFECT ON THE DETERMINATION OF IONIZATION COEFFICIENTS
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STILLMAN, GE
[J]. SOLID-STATE ELECTRONICS, 1982, 25 (12) : 1189 - 1200

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