STUDIES OF TEMPERATURE-DEPENDENCE OF DIELECTRIC-BREAKDOWN FIELD IN MOLECULAR LANGMUIR FILMS

被引：2

作者：

AGARWAL, DK ^{[1
]}

SRIVASTAVA, VK ^{[1
]}

机构：

[1] UNIV ROORKEE, DEPT PHYS, ROORKEE 247667, INDIA

来源：

THIN SOLID FILMS | 1975年 / 27卷 / 01期

关键词：

D O I：

10.1016/0040-6090(75)90006-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：49 / 62

页数：14

共 40 条

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[2] TEMPERATURE-DEPENDENCE OF BREAKDOWN FIELD IN BARIUM STEARATE MULTILAYER FILMS [J].

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[9] BREAKDOWN CONDUCTION IN AL-SIO-AL CAPACITORS [J].

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[10] DESTRUCTIVE BREAKDOWN IN THIN FILMS OF SIO MGF2 CAF2 CEF3 CEO2 AND TEFLON [J].

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