EFFECTS OF ION-IMPLANTED NITROGEN IMPURITIES ON MOLYBDENUM SILICIDE FORMATION

被引:5
作者
HO, KT [1 ]
NICOLET, MA [1 ]
SCOTT, DM [1 ]
机构
[1] UNIV CALIF SAN DIEGO,LA JOLLA,CA 92093
关键词
D O I
10.1016/0040-6090(85)90222-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
24
引用
收藏
页码:171 / 179
页数:9
相关论文
共 24 条
[21]   LOW-CONCENTRATION OXYGEN DEPTH PROFILING BY O-16(D,ALPHA)N-14 REACTION [J].
PICRAUX, ST .
NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :289-294
[22]   REFRACTORY-METAL SILICIDES FOR VLSI APPLICATIONS [J].
SINHA, AK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :778-785
[23]   VLSI METALLIZATION - SOME PROBLEMS AND TRENDS [J].
VOSSEN, JL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :761-765
[24]  
ZHU MF, UNPUB THIN SOLID FIL