VLSI METALLIZATION - SOME PROBLEMS AND TRENDS

[1] DEFECTS IN SI-SIO2 STRUCTURES INTRODUCED BY SPUTTER METALLIZATION [J]. THIN SOLID FILMS, 1981, 75 (01) : 37 - 46

[2] POST-GATE PLASMA AND SPUTTER PROCESS EFFECTS ON RADIATION HARDNESS OF METAL GATE CMOS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1459 - 1464

[3] EFFECT OF OXYGEN ON ELECTROMIGRATION BEHAVIOR OF AL THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1972, 20 (11) : 434 - +

[4] CONTACT RESISTANCE AND CONTACT RESISTIVITY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) : 507 - &

[5] CHEUNG N, 1980, ELECTROCHEM SOC P, V80, P323

[6] CHEUNG N, 1979, EL SOC EXT ABSTR, V79, P949

[7] INSITU AUGER-ELECTRON SPECTROSCOPY OF SI AND SIO2 SURFACES PLASMA ETCHED IN CF4-H2 GLOW-DISCHARGES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5210 - 5213

[8] DEPPE HR, 1977, SEMICONDUCTOR SILICO, P1082

[9] DOWNEY DF, 1981, SOLID STATE TECHNOL, V24, P121

[10] EIZENBERG M, 1980, ELECTROCHEM SOC M ST

[1] DEFECTS IN SI-SIO2 STRUCTURES INTRODUCED BY SPUTTER METALLIZATION [J]. THIN SOLID FILMS, 1981, 75 (01) : 37 - 46

[2] POST-GATE PLASMA AND SPUTTER PROCESS EFFECTS ON RADIATION HARDNESS OF METAL GATE CMOS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1459 - 1464

[3] EFFECT OF OXYGEN ON ELECTROMIGRATION BEHAVIOR OF AL THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1972, 20 (11) : 434 - +

[4] CONTACT RESISTANCE AND CONTACT RESISTIVITY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) : 507 - &

[5] CHEUNG N, 1980, ELECTROCHEM SOC P, V80, P323

[6] CHEUNG N, 1979, EL SOC EXT ABSTR, V79, P949

[7] INSITU AUGER-ELECTRON SPECTROSCOPY OF SI AND SIO2 SURFACES PLASMA ETCHED IN CF4-H2 GLOW-DISCHARGES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5210 - 5213

[8] DEPPE HR, 1977, SEMICONDUCTOR SILICO, P1082

[9] DOWNEY DF, 1981, SOLID STATE TECHNOL, V24, P121

[10] EIZENBERG M, 1980, ELECTROCHEM SOC M ST