VLSI METALLIZATION - SOME PROBLEMS AND TRENDS

[21] HAM WT, COMMUNICATION

[22] HOLLAHAN JR, 1978, THIN FILM PROCESSES

[23] SPUTTERED INSULATOR FILM CONTOURING OVER SUBSTRATE TOPOGRAPHY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (06): : 1135 - 1137

[24] KERN W, 1973, 11TH ANN P REL PHYS, P214

[25] A MODEL FOR THE WIDTH DEPENDENCE OF ELECTROMIGRATION LIFETIMES IN ALUMINUM THIN-FILM STRIPES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (12) : 968 - 970

[26] LOWENHEIM FA, 1978, THIN FILM PROCESSES

[27] MANPAA M, 1980, ELECTROCHEM SOC P, V80, P316

[28] SILICIDE FORMATION WITH PD-V ALLOYS AND BILAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5855 - 5859

[29] DEGRADATION OF OXIDE-FILMS DUE TO RADIATION EFFECTS IN EXPOSURE TO PLASMAS IN SPUTTER DEPOSITION AND BACKSPUTTERING [J]. PROCEEDINGS OF THE IEEE, 1974, 62 (09) : 1236 - 1241

[30] MELLIARSMITH CM, 1978, THIN FILM PROCESSES, pCHV2

[21] HAM WT, COMMUNICATION

[22] HOLLAHAN JR, 1978, THIN FILM PROCESSES

[23] SPUTTERED INSULATOR FILM CONTOURING OVER SUBSTRATE TOPOGRAPHY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (06): : 1135 - 1137

[24] KERN W, 1973, 11TH ANN P REL PHYS, P214

[25] A MODEL FOR THE WIDTH DEPENDENCE OF ELECTROMIGRATION LIFETIMES IN ALUMINUM THIN-FILM STRIPES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (12) : 968 - 970

[26] LOWENHEIM FA, 1978, THIN FILM PROCESSES

[27] MANPAA M, 1980, ELECTROCHEM SOC P, V80, P316

[28] SILICIDE FORMATION WITH PD-V ALLOYS AND BILAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5855 - 5859

[29] DEGRADATION OF OXIDE-FILMS DUE TO RADIATION EFFECTS IN EXPOSURE TO PLASMAS IN SPUTTER DEPOSITION AND BACKSPUTTERING [J]. PROCEEDINGS OF THE IEEE, 1974, 62 (09) : 1236 - 1241

[30] MELLIARSMITH CM, 1978, THIN FILM PROCESSES, pCHV2