ELECTRICAL TRANSPORT-PROPERTIES OF COSI2 AND CO(SIXGE1-X)2 FILMS FORMED BY DIFFERENT METHODS

被引：2

作者：

LI, BZ

LIU, P

JIANG, GB

HUANG, WN

LU, X

AITKEN, RG

DANESHVAR, K

PUZEREWSKI, M

SINGCO, G

机构：

[1] UNIV N CAROLINA, DEPT PHYS, CHARLOTTE, NC 28223 USA

[2] UNIV N CAROLINA, DEPT ELECT ENGN, CHARLOTTE, NC 28223 USA

[3] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 10期

关键词：

D O I：

10.1063/1.350200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical transport properties of CoSi2 and Co(SixGe1-x)2 thin films formed by solid state interaction and co-evaporation in the range of 4-300 K were studied. The Hall effect data indicate a hole carrier conduction in all samples. The rapid thermal annealed CoSi2 exhibits a typical metallic conduction with a residual resistivity of 3.3-mu-OMEGA-cm and room-temperature (RT) resistivity of 15-mu-OMEGA cm. The co-evaporated CoSi2 and Co(Si0.9Ge0.1)2 films after low temperature annealing up to 250-degrees-C show a low resistivity of 70-80-mu-OMEGA cm at RT and change little down to 4 K. The hole carrier density of all the samples studied has values close to 2-3 x 10(22) cm-3, while the carrier Hall mobility has large differences.

引用

页码：5427 / 5432

页数：6

共 12 条

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