APPLICATION OF DAMAGE CONSTANTS IN GAMMA-IRRADIATED AMPHOTERICALLY SI DOPED GAAS LEDS

被引：13

作者：

BARNES, CE

SODA, KJ

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

[2] USAF,WEAP LAB,KIRTLAND AFB,NM 87117

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1976年 / 23卷 / 06期

关键词：

D O I：

10.1109/TNS.1976.4328559

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1664 / 1670

页数：7

共 24 条

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