NOVEL PROCESS FOR VISIBLE-LIGHT EMISSION FROM SI PREPARED BY ION IRRADIATION

被引：10

作者：

OCHIAI, Y ^{[1
]}

OOKUBO, N ^{[1
]}

WATANABE, H ^{[1
]}

MATSUI, S ^{[1
]}

MOCHIZUKI, Y ^{[1
]}

ONO, H ^{[1
]}

KIMURA, S ^{[1
]}

ICHIHASHI, T ^{[1
]}

机构：

[1] NEC CORP LTD,MICROELECTR RES LABS,TSUKUBA 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 5A期

关键词：

VISIBLE LIGHT EMISSION; SILICON; OPTOELECTRONICS; ANODIZATION; POROUS SILICON;

D O I：

10.1143/JJAP.31.L560

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel process for visible light emission from Si has been successfully developed. The sample was irradiated with argon or chlorine ions in an ECR (electron cyclotron resonance) etching apparatus. After etching, the sample was placed in HF solution for 30 minutes. Visible light emission from the sample has been confirmed at a peak wavelength of 700 nm. Various characterizations have been performed, such as SEM and TEM observations, X-ray diffraction and FTIR spectroscopy. Anodized porous silicon is also characterized for comparison.

引用

页码：L560 / L563

页数：4

共 8 条

[1] PHOTOLUMINESCENCE OF HIGH POROSITY AND OF ELECTROCHEMICALLY OXIDIZED POROUS SILICON LAYERS [J].