AES MICROSTRUCTURAL INVESTIGATIONS OF LOW-TEMPERATURE, LOW-FREQUENCY PLASMA-DEPOSITED A-SIXC1-X-H FILMS

被引：9

作者：

GAT, E

CROS, B

BERJOAN, R

DURAND, J

机构：

[1] ENSCM,PHYSICOCHIM MAT LAB,CNRS,URA 1312,8 RUE ECOLE NORMALE,F-34053 MONTPELLIER 01,FRANCE

[2] INST SCI & GENIE MAT & PROC,F-66120 FONT ROMEU,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1993年 / 64卷 / 04期

关键词：

D O I：

10.1016/0169-4332(93)90204-O

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Amorphous a-SixC1-x:H films have been prepared by low-temperature, low-frequency PECVD. Information on the microstructure was obtained from a fine study of the shape of the Si LVV, Si KLL and C KW peaks. Correlated with our previous IR, XPS and EXAFS studies, the results reveal the existence of three domains as a function of composition x, corresponding to three different types of materials. Structural models are proposed for each of them.

引用

页码：345 / 351

页数：7

共 18 条

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