NORMALLY-ON GAAS/ALAS MULTIPLE-WELL FABRY-PEROT REFLECTION MODULATORS FOR LARGE 2-DIMENSIONAL ARRAYS

被引:7
作者
LIN, CH
GOOSSEN, KW
SADRA, K
MEESE, JM
机构
[1] Department of Electrical and Computer Engineering, University of Missouri-Columbia, Columbia
关键词
D O I
10.1063/1.112083
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report normal-incident normally-on 90 angstrom GaAs/21 angstrom AlAs multiple-quantum-well Fabry-Perot reflection modulators operating at the same wavelength with the same reverse bias over much of a 2 in. wafer. The fabricated modulators achieve ON/OFF reflectance changes larger than 48% and ON/OFF contrast ratios larger than 14.7 over a diameter of 31 mm at the wavelength of 845 nm with a fixed bias of 7 V. Over a diameter of 40 mm, these modulators achieve reflectance changes larger than 43.2% and contrast ratios larger than 5.
引用
收藏
页码:1242 / 1244
页数:3
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