A GAAS/ALGAAS ASYMMETRIC FABRY-PEROT REFLECTION MODULATOR WITH VERY HIGH CONTRAST RATIO

被引：24

作者：

GERBER, DS

DROOPAD, R

MARACAS, GN

机构：

[1] Center for Solid State Engineering Research, Arizona State University, Tempe

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 01期

关键词：

D O I：

10.1109/68.185059

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report results on the performance of a normally on, electroabsorptive, surface-normal Fabry-Perot reflection modulator. The device employs a cavity with a 100 angstrom GaAs/100 angstrom Al0.3Ga0.7As multiple quantum well and top and bottom quarter-wave mirrors with 4 and 19.5 periods, respectively. Very low values of off-state reflectance were measured, giving a maximum contrast ratio > 1000 (30 dB) and a maximum reflectance difference of 64.3%. The contrast ratio is, to our knowledge, the largest reported to date.

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页码：55 / 58

页数：4

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共 9 条

[1] CHARACTERIZATION OF GAAS/(GAAS)N(ALAS)M SURFACE-EMITTING LASER STRUCTURES THROUGH REFLECTIVITY AND HIGH-RESOLUTION ELECTRON-MICROSCOPY MEASUREMENTS [J].

FAIST, J ;

GANIERE, JD ;

BUFFAT, P ;

SAMPSON, S ;

REINHART, FK .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (03) :1023-1032

[2] SELF-ELECTRO-OPTIC DEVICE BASED ON A SUPERLATTICE ASYMMETRIC FABRY-PEROT MODULATOR WITH AN ON OFF RATIO-GREATER-THAN-100-1 [J].

LAW, KK ;

YAN, RH ;

COLDREN, LA ;

MERZ, JL .

APPLIED PHYSICS LETTERS, 1990, 57 (13) :1345-1347

[3] ROLE OF ELECTROREFRACTION IN QUANTUM-WELL FABRY-PEROT MODULATORS [J].

LIVESCU, G ;

BOYD, GD ;

MORGAN, RA ;

CHIROVSKY, LMF ;

FOX, AM ;

LEIBENGUTH, RE ;

ASOM, MT ;

FOCHT, MW .

APPLIED PHYSICS LETTERS, 1992, 60 (12) :1418-1420

[4] IMPURITY TRAPPING, INTERFACE STRUCTURE, AND LUMINESCENCE OF GAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

PETROFF, PM ;

MILLER, RC ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1984, 44 (02) :217-219

[5] LOW-VOLTAGE MULTIPLE QUANTUM WELL REFLECTION MODULATOR WITH ON-OFF RATIO-GREATER-THAN-100-1 [J].

WHITEHEAD, M ;

RIVERS, A ;

PARRY, G ;

ROBERTS, JS ;

BUTTON, C .

ELECTRONICS LETTERS, 1989, 25 (15) :984-985

[6] TRANSVERSE MODULATORS WITH A RECORD REFLECTION CHANGE OF GREATER-THAN-20-PERCENT/V USING ASYMMETRIC FABRY-PEROT STRUCTURES [J].

YAN, RH ;

SIMES, RJ ;

COLDREN, LA ;

GOSSARD, AC .

APPLIED PHYSICS LETTERS, 1990, 56 (17) :1626-1628

[7] SURFACE-NORMAL ELECTROABSORPTION REFLECTION MODULATORS USING ASYMMETRIC FABRY-PEROT STRUCTURES [J].

YAN, RH ;

SIMES, RJ ;

COLDREN, LA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (07) :1922-1931

[8] ELECTROABSORPTIVE FABRY-PEROT REFLECTION MODULATORS WITH ASYMMETRIC MIRRORS [J].

YAN, RH ;

SIMES, RJ ;

COLDREN, LA .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1989, 1 (09) :273-275

[9] EXTREMELY LOW-VOLTAGE FABRY-PEROT REFLECTION MODULATORS [J].

YAN, RH ;

SIMES, RJ ;

COLDREN, LA .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (02) :118-119