MECHANISMS OF BAND BENDING AT CSOX/GAAS(110) INTERFACES - INFLUENCE OF OVERLAYER STOICHIOMETRY AND INTERFACIAL REACTIVITY

被引：8

作者：

PRIETSCH, M

DOMKE, M

LAUBSCHAT, C

REMMERS, G

WESCHKE, E

MANDEL, T

ORTEGA, JE

KAINDL, G

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584591

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：986 / 990

页数：5

共 20 条

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[2]

COHEN ML, 1980, ADV ELECTRON EL PHYS, V51, P1

[3] ON THE FORMATION OF SEMICONDUCTOR INTERFACES [J].

FLORES, F ;

TEJEDOR, C .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (02) :145-175

[4] LEED-AUGER CHARACTERIZATION OF GAAS DURING ACTIVATION TO NEGATIVE ELECTRON AFFINITY BY ADSORPTION OF CS AND O [J].

GOLDSTEIN, B .

SURFACE SCIENCE, 1975, 47 (01) :143-161

[5] VARIATION OF N-GAAS (100) INTERFACE FERMI LEVEL BY GE AND SI OVERLAYERS [J].

GRANT, RW ;

WALDROP, JR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1015-1019

[6] THEORY OF SURFACE STATES [J].

HEINE, V .

PHYSICAL REVIEW, 1965, 138 (6A) :1689-&

[7] THE OXIDATION OF GAAS(110) - A REEVALUATION [J].

LANDGREN, G ;

LUDEKE, R ;

JUGNET, Y ;

MORAR, JF ;

HIMPSEL, FJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :351-358

[8] SWITCHING OF BAND BENDING AT THE NONREACTIVE CSOX/GAAS(110) INTERFACE [J].

LAUBSCHAT, C ;

PRIETSCH, M ;

DOMKE, M ;

WESCHKE, E ;

REMMERS, G ;

MANDEL, T ;

ORTEGA, JE ;

KAINDL, G .

PHYSICAL REVIEW LETTERS, 1989, 62 (11) :1306-1309

[9] SCHOTTKY-BARRIER FORMATION ON III-V SEMICONDUCTOR SURFACES - A CRITICAL-EVALUATION [J].

LINDAU, I ;

KENDELEWICZ, T .

CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1986, 13 (01) :27-55

[10] METAL-SEMICONDUCTOR JUNCTION FOR (110) SURFACES OF ZINCBLENDE COMPOUNDS [J].

LOUIS, E ;

YNDURAIN, F ;

FLORES, F .

PHYSICAL REVIEW B, 1976, 13 (10) :4408-4418

← 1 2 →