LOW-RATE PROTON BOMBARDMENT OF DIFFUSED SILICON COUNTERS

被引：2

作者：

SCOTT, RE

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1965年 / 32卷 / 01期

关键词：

D O I：

10.1016/0029-554X(65)90495-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：171 / +

页数：1

共 9 条

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[8] DEFECTS IN IRRADIATED SILICON .1. ELECTRON SPIN RESONANCE OF SI-A CENTER [J].

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[9] ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN IRRADIATED SILICON [J].

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