EFFECTS OF TEMPERATURE AND REAGENT CONCENTRATION ON THE MORPHOLOGY OF CHEMICALLY VAPOR-DEPOSITED BETA-TA2O5

被引:13
作者
BAE, YW
LEE, WY
STINTON, DP
机构
[1] Oak Ridge National Laboratory, Oak Ridge, Tennessee
关键词
D O I
10.1111/j.1151-2916.1995.tb08485.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Crystalline beta-Ta2O5 coatings mere deposited on hot-isostatically-pressed Si3N4 by reacting TaCl5 with H-2 and CO2 in the temperature range of 1000 degrees-1300 degrees C and at a pressure of 660 Pa, The Ta2O5 coatings generally consisted of well-coalesced 2-3 mu m grains, resulting in the formation of a nonporous coating morphology. However, the presence of microcracks on the as-deposited surface was consistently observed, The surface morphology, texture, and growth rate of the coatings were examined as a function of deposition parameters.
引用
收藏
页码:1297 / 1300
页数:4
相关论文
共 11 条
[1]   ELLIPSOMETRIC EXAMINATION OF GROWTH AND DISSOLUTION RATES OF TA2O5 FILMS FORMED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
AN, CH ;
SUGIMOTO, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (07) :1956-1962
[2]   DEVELOPMENT OF TANTALUM PENTOXIDE COATINGS BY CHEMICAL-VAPOR-DEPOSITION [J].
GRAHAM, DW ;
STINTON, DP .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (09) :2298-2304
[3]   CORROSION OF SILICON-BASED CERAMICS IN COMBUSTION ENVIRONMENTS [J].
JACOBSON, NS .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1993, 76 (01) :3-28
[4]   CHEMICAL VAPOR-DEPOSITION OF TANTALUM PENTOXIDE FILMS FOR METAL-INSULATOR-SEMICONDUCTOR DEVICES [J].
KAPLAN, E ;
BALOG, M ;
FROHMANBENTCHKOWSKY, D .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (10) :1570-1573
[5]   SELECTED PROPERTIES OF PYROLYTIC TA2O5 FILMS [J].
KNAUSENBERGER, WH ;
TAUBER, RN .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (07) :927-931
[6]  
LEE WY, UNPUB J AM CERAM SOC
[7]  
Reid R.C., 1977, PROPERTIES GASES LIQ
[8]  
SHANMUGHAM S, UNPUB
[9]  
TAKAHASHI T, 1972, J LESS-COMMON MET, V38, P211
[10]  
Touloukian Y. S., 1977, THERMAL EXPANSION NO, P374