PHOTO-LUMINESCENCE AND IMPURITY CONCENTRATION IN GAXIN1-XASYP1-Y ALLOYS LATTICE-MATCHED TO INP

被引:58
作者
PEARSALL, TP
EAVES, L
PORTAL, JC
机构
[1] UNIV NOTTINGHAM, DEPT PHYS, NOTTINGHAM NG7 2RD, ENGLAND
[2] INST NATL SCI APPL LYON, DEPT GENIE PHYS, F-31077 TOULOUSE, FRANCE
关键词
D O I
10.1063/1.332122
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1037 / 1047
页数:11
相关论文
共 24 条
[11]   IN0.53GA0.47AS FETS WITH INSULATOR-ASSISTED SCHOTTKY GATES [J].
OCONNOR, P ;
PEARSALL, TP ;
CHENG, KY ;
CHO, AY ;
HWANG, JCM ;
ALAVI, K .
ELECTRON DEVICE LETTERS, 1982, 3 (03) :64-66
[12]  
Pankove J. I., 1971, OPTICAL PROCESSES SE, P107
[13]   CATHODOLUMINESCENCE OF N-TYPE GAAS [J].
PANKOVE, JI .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5368-&
[14]  
Pearsall T. P., 1982, Gallium Arsenide and Related Compunds, 1981. Ninth International Symposium on Gallium Arsenide and Related Compounds, P269
[15]  
Pearsall T. P., 1981, Gallium Arsenide and Related Compounds, 1980. Eighth International Symposium on Gallium Arsenide and Related Compounds, P639
[16]  
Pearsall T. P., 1982, GaInAsP alloy semiconductors, P295
[17]   GA0.47IN0.53AS - A TERNARY SEMICONDUCTOR FOR PHOTODETECTOR APPLICATIONS [J].
PEARSALL, TP .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (07) :709-720
[18]   THE CARRIER MOBILITIES IN GA0.47IN0.53AS GROWN BY ORGANOMETALLIC CVD AND LIQUID-PHASE EPITAXY [J].
PEARSALL, TP ;
HIRTZ, JP .
JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) :127-131
[19]  
Suematsu Y., 1982, GaInAsP alloy semiconductors, P341
[20]   LPE GROWTH AND PHOTO-LUMINESCENCE OF IN1-XGAXP1-YASY ON GAAS [J].
SUZUKI, A ;
KYURAGI, H ;
MATSUMURA, S ;
MATSUNAMI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :211-214