CAPACITANCE OF DOUBLE SATURATION N GE-N SI HETEROJUNCTIONS

被引:3
作者
DONNELLY, JP
MILNES, AG
机构
来源
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1965年 / 53卷 / 12期
关键词
D O I
10.1109/PROC.1965.4488
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2109 / &
相关论文
共 9 条
[1]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[2]   EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].
ANDERSON, RL .
SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&
[3]  
DONNELLY JP, TO BE PUBLISHED
[4]   DISLOCATION PLANES IN SEMICONDUCTORS [J].
MATARE, HF .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) :581-589
[5]  
OLDHAM WG, 1963, J ELECTROCHEM SOC, V110, pC53
[6]   INTERFACE STATES IN ABRUPT SEMICONDUCTOR HETEROJUNCTIONS [J].
OLDHAM, WG ;
MILNES, AG .
SOLID-STATE ELECTRONICS, 1964, 7 (02) :153-165
[7]   ELECTRONIC PROCESSES AT GRAIN BOUNDARIES [J].
SOSNOWSKI, L .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :142-146
[8]   GRAIN BOUNDARY BARRIERS IN GERMANIUM [J].
TAYLOR, WE ;
ODELL, NH ;
FAN, HY .
PHYSICAL REVIEW, 1952, 88 (04) :867-875
[9]   OPTICAL PHENOMENA IN GE-GAP HETEROJUNCTIONS [J].
VANRUYVE.LJ ;
PAPENHUIJZEN, JM ;
VERHOEVEN, AC .
SOLID-STATE ELECTRONICS, 1965, 8 (08) :631-+