SURFACE-DIFFUSION AND ATOM INCORPORATION KINETICS IN MBE OF INGAAS AND ALGAAS

被引：16

作者：

SUZUKI, T

NISHINAGA, T

机构：

[1] Department of Electronic Engineering, Faculty of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo, 113

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90966-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have developed a theory to obtain the surface flux of growing species in MBE, taking account of step kinematics as well as surface diffusion. This treatment makes it possible to understand the elemental growth process in MBE of III-V alloys. The MBE experiments are carried out and the solid composition of InGaAs and AlGaAs is measured for the different faces with a different off angle. Theory shows qualitatively a good agreement with the present experiments suggesting that the role of step kinetics is important in controlling the alloy composition.

引用

页码：173 / 177

页数：5

共 9 条

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