NITROGEN RELATED DEEP ELECTRON TRAP IN GAP

被引：61

作者：

FERENCZI, G

KRISPIN, P

SOMOGYI, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 07期

关键词：

D O I：

10.1063/1.332563

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3902 / 3912

页数：11

共 31 条

[1] HIGH-RESOLUTION THERMAL MAPPING OF MICROCIRCUITS USING NEMATIC LIQUID-CRYSTALS [J].

ASZODI, G ;

SZABON, J ;

JANOSSY, I ;

SZEKELY, V .

SOLID-STATE ELECTRONICS, 1981, 24 (12) :1127-&

[2]

BRUNWIN R, 1979, ELECTRON LETT, V15, P348

[3] DEEP STATES IN TRANSITION-METAL DIFFUSED GALLIUM-PHOSPHIDE [J].

BRUNWIN, RF ;

HAMILTON, B ;

HODGKINSON, J ;

PEAKER, AR ;

DEAN, PJ .

SOLID-STATE ELECTRONICS, 1981, 24 (03) :249-256

[4]

DAPKUS PD, 1976, J APPL PHYS, V47, P4061, DOI 10.1063/1.323236

[5] THERMALLY STIMULATED CURRENT MEASUREMENTS AND THEIR CORRELATION WITH EFFICIENCY AND DEGRADATION IN GAP LEDS [J].

FABRE, E ;

BHARGAVA, RN .

APPLIED PHYSICS LETTERS, 1974, 24 (07) :322-324

[6] DEFECT REACTIONS IN GAP-(ZN,O) [J].

FEENSTRA, RM ;

MCGILL, TC .

PHYSICAL REVIEW LETTERS, 1981, 47 (13) :925-927

[7] DEGRADATION INDUCED FORMATION OF EXTENDED DEFECTS IN GAP-N LEDS [J].

FERENCZI, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (04) :421-424

[8] PRINCIPLES OF THE OPTIMUM LOCK-IN AVERAGING IN DLTS MEASUREMENT [J].

FERENCZI, G ;

KISS, J .

ACTA PHYSICA ACADEMIAE SCIENTIARUM HUNGARICAE, 1981, 50 (03) :285-290

[9]

FERENCZI G, UNPUB

[10] DETERMINATION OF NITROGEN CONCENTRATION IN GAP EPITAXIAL LAYERS BY 2 INDEPENDENT METHODS [J].

HANSEL, T ;

BRUHL, HG ;

BINDEMANN, R ;

SEIFERT, W ;

JACOBS, K .

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1979, 14 (08) :977-984

← 1 2 3 4 →