ELECTROCHEMICAL TECHNIQUE FOR CONTINUOUS AUTOMATIC PLOTTING OF SEMICONDUCTOR DONOR CONCENTRATION OVER LARGE DEPTHS

被引：8

作者：

AMBRIDGE, T ^{[1
]}

FAKTOR, MM ^{[1
]}

机构：

[1] BRITISH POST OFF,RES DEPT,DOLLIS HILL,LONDON NW2 7DT,ENGLAND

来源：

关键词：

D O I：

10.1049/el:19740154

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：204 / 205

页数：2

共 7 条

[1] AMBRIDGE T, 1974, J APPL ELECTROCHEM, V4
[2] Ambridge T., 1973, J APPL ELECTROCHEM, V3, P1
[3] INSTRUMENT FOR RAPID DETERMINATION OF SEMICONDUCTOR IMPURITY PROFILES
BAXANDALL, PJ
COLLIVER, DJ
FRAY, AF
[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1971, 4 (03): : 213 - +
[4] SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS FOR DEEP LEVEL IMPURITY DETERMINATION
BLEICHER, M
LANGE, E
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 375 - 380
[5] COPELAND JA, 1969, IEEE T ELECTRON DEVI, VED16, P445
[6] MEASUREMENT OF SEMICONDUCTOR CARRIER CONCENTRATION PROFILES
HUGHES, FD
WILSON, M
HEADON, RF
[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1972, 5 (03): : 241 - &
[7] USE OF A RECTANGULAR CURRENT PULSE FOR TRACING SEMICONDUCTOR RESISTIVITY PROFILES
LADBROOKE, PH
CARROLL, JE
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1971, 31 (02) : 149 - +