共 18 条
- [12] ELECTRONIC EFFECTS ON DISLOCATION VELOCITIES IN HEAVILY DOPED SILICON [J]. PHYSICAL REVIEW B, 1976, 13 (08): : 3548 - 3557
- [13] STRUCTURAL MODEL FOR INTERFACE BETWEEN AMORPHOUS AND CRYSTALLINE SI OR GE [J]. ACTA METALLURGICA, 1978, 26 (07): : 1167 - 1177
- [14] SPAEPEN F, 1981, LASER ELECTRON BEAM, P15
- [16] SZE SM, 1969, PHYSICS SEMICONDUCTO
- [17] WILLIAMS JJ, UNPUB
- [18] WILLIAMS JS, 1983, SURFACE MODIFICATION, P198