HIGH-REFLECTIVITY BRAGG MIRRORS FOR OPTOELECTRONIC APPLICATIONS

被引：17

作者：

MURTAZA, SS ^{[1
]}

ANSELM, KA ^{[1
]}

SRINIVASAN, A ^{[1
]}

STREETMAN, BG ^{[1
]}

CAMPBELL, JC ^{[1
]}

BEAN, JC ^{[1
]}

PETICOLAS, L ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1995年 / 31卷 / 10期

关键词：

D O I：

10.1109/3.466057

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report novel Bragg-reflecting structures that represent a departure from the conventional quarter-wavelength stacks used currently in the optoelectronics industry. These structures can be used to design high-reflectivity mirrors in strained material systems and mirrors that will provide high reflectivities in more than one wavelength band. Such mirrors can be used to design resonant-cavities for optical absorption as well as emission.

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页码：1819 / 1825

页数：7

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