DESIGN AND FABRICATION OF ASYMMETRIC STRAINED-LAYER MIRRORS FOR OPTOELECTRONIC APPLICATIONS

被引:16
作者
BEAN, JC [1 ]
PETICOLAS, LJ [1 ]
HULL, R [1 ]
WINDT, DL [1 ]
KUCHIBHOTLA, R [1 ]
CAMPBELL, JC [1 ]
机构
[1] UNIV TEXAS,MICROELECTR RES CTR,AUSTIN,TX 78712
关键词
D O I
10.1063/1.110018
中图分类号
O59 [应用物理学];
学科分类号
摘要
The design of thin-film mirrors is optimized for strained layer materials systems. It is shown that the use of asymmetric structures produces only minor loss in reflectivity per mirror period, while greatly extending the number of periods that can be grown in a defect-free mode. As applied to the GexSi1-x/Si strained layer system, the net result is an enhancement of reflectivity, with 1.3 mum mirrors achieving peak values near 75%. The approach is applicable to other materials systems and should yield even higher reflectivities in situations where wider ranges in index of refraction are available.
引用
收藏
页码:444 / 446
页数:3
相关论文
共 12 条
  • [1] SILICON MBE APPARATUS FOR UNIFORM HIGH-RATE DEPOSITION ON STANDARD FORMAT WAFERS
    BEAN, JC
    SADOWSKI, EA
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (02): : 137 - 142
  • [2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
    BEAN, JC
    FELDMAN, LC
    FIORY, AT
    NAKAHARA, S
    ROBINSON, IK
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440
  • [3] BORN M, 1991, PRINCIPLES OPTICS, P66
  • [4] HIGH QUANTUM EFFICIENCY, LONG WAVELENGTH INP/INGAAS MICROCAVITY PHOTODIODE
    DENTAI, AG
    KUCHIBHOTLA, R
    CAMPBELL, JC
    TSAI, C
    LEI, C
    [J]. ELECTRONICS LETTERS, 1991, 27 (23) : 2125 - 2127
  • [5] STABILITY OF SEMICONDUCTOR STRAINED-LAYER SUPERLATTICES
    HULL, R
    BEAN, JC
    CERDEIRA, F
    FIORY, AT
    GIBSON, JM
    [J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 56 - 58
  • [6] OPTICAL-SPECTRA OF SIXGE1-X ALLOYS
    HUMLICEK, J
    GARRIGA, M
    ALONSO, MI
    CARDONA, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (07) : 2827 - 2832
  • [7] REFRACTIVE-INDEX DETERMINATION OF SIGE USING REACTIVE ION ETCHING ELLIPSOMETRY - APPLICATION FOR THE DEPTH PROFILING OF THE GE CONCENTRATION
    KROESEN, GMW
    OEHRLEIN, GS
    DEFRESART, E
    SCILLA, GJ
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (11) : 1351 - 1353
  • [8] GE0.2SI0.8/SI BRAGG-REFLECTOR MIRRORS FOR OPTOELECTRONIC DEVICE APPLICATIONS
    KUCHIBHOTLA, R
    CAMPBELL, JC
    BEAN, JC
    PETICOLAS, L
    HULL, R
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (18) : 2215 - 2217
  • [9] LOW-VOLTAGE HIGH-GAIN RESONANT-CAVITY AVALANCHE PHOTODIODE
    KUCHIBHOTLA, R
    SRINIVASAN, A
    CAMPBELL, JC
    LEI, C
    DEPPE, DG
    HE, YS
    STREETMAN, BG
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (04) : 354 - 356
  • [10] GEXSI1-X STRAINED-LAYER SUPERLATTICE WAVE-GUIDE PHOTODETECTORS OPERATING NEAR 1.3 MU-M
    TEMKIN, H
    PEARSALL, TP
    BEAN, JC
    LOGAN, RA
    LURYI, S
    [J]. APPLIED PHYSICS LETTERS, 1986, 48 (15) : 963 - 965